Developed for the wireless infrastructure market, the 30W 1920LD30 and 85W 1920LD85 lateral diffusion metal oxide semiconductor transistors (LDMOs) feature gold metalization and ESD protection ...
Length of diffusion effects in MOS BSIM models can significantly impact analog circuit simulations at 130 nanometers and below. These effects, also known as stress effects from the shallow trench ...
“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback