Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
Plasma chemistry and etching processes form the backbone of modern semiconductor fabrication, enabling the precise patterning and removal of material layers essential to device performance. By ...
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Joint research validates new semiconductor etching process, achieving five times speed improvement
A collaborative research team from Nagoya University and Tokyo Electron Miyagi Ltd. has demonstrated that the company's new ...
We first developed a virtual device structure to test how ALD thickness affects hole size uniformity and CD. We started our virtual experiment by using two crisscross SAQP processes and transferring a ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
These strategies are described in more detail in the following sections. Skeleton Etch or Anisotropic Removal of Dielectric Layers This method involves anisotropic removal of all dielectric layers ...
Discover Tokyo Electron’s new semiconductor etching method for faster, greener, and precise chip production. Read more ...
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