Tech Xplore on MSN
Joint research validates new semiconductor etching process, achieving five times speed improvement
A collaborative research team from Nagoya University and Tokyo Electron Miyagi Ltd. has demonstrated that the company's new ...
Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
Discover Tokyo Electron’s new semiconductor etching method for faster, greener, and precise chip production. Read more ...
A new approach combining atomic layer deposition and organic film etch process may solve critical challenges in the various processes in advanced nodes. We demonstrated a high selective and ...
(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
An extensive range of insulating thin films are utilized in modern VLSI circuits providing electrical isolation between conducting regions within a device and as a final capping passivation layer.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback