August 26, 2014. Today, KLA-Tencor Corp. introduced the WaferSight PWG patterned wafer geometry measurement system, the LMS IPRO6 reticle pattern placement metrology system and the K-T Analyzer 9.0 ...
To view the multimedia assets associated with this release, please click: http://www.multivu.com/players/English/7065552-kla-tencor-wafersight-5d-patterning-control ...
As the Extreme Ultraviolet (EUV) lithography ecosystem is being actively mapped out to enable sub-7nm design rule devices, there is an immediate and imperative need to identify the EUV reticle (mask) ...
Milpitas, CA. KLA-Tencor has announced the new FlashScan reticle blank (composite substrates onto which the reticle pattern is written) inspection product line. While KLA-Tencor has been a major ...
SAN JOSE, Calif. — KLA-Tencor Corp. has rolled out its new reticle defect inspection system. Targeted for the 2x-nm logic (3x-nm half-pitch memory) node, the new Teron 600 platform brings programmable ...
High NA EUV is the next step in smaller transistors. Like NXE systems, it uses EUV light to print tiny features on silicon wafers. And by turning the NA knob, we deliver even better resolution: The ...
After many years of hearing that EUV is almost ready for prime time, the tide is finally coming in. A decade of slow but steady progress has resulted in exposure tools that can expose on the order of ...
Modern photolithography machines must deliver extraordinary precision on a repeatable basis, and in high volume production. In response to demands for increased throughput in the semiconductor ...
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