Abstract: In this study, SiGe channel nanosheet field-effect transistor (NSFET) with a novel channel release stopping layer (CRSL), namely CRSL-SiGe NSFET, is proposed to addresses the issue of ...
Abstract: This paper presents a CMOS small-signal equivalent circuit model suitable for terahertz band. In this model, two RC parallel structures are used to characterize the interconnect lines ...
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