Abstract: This paper reports on the use of TCAD for thermal simulation of GaN-on-SiC HEMT RF power transistors. Firstly, the results are compared with those obtained using ANSYS Mechanical Pro, then ...
A Cornell-designed transistor may supercharge next-gen wireless tech while easing reliance on foreign gallium, according to The Cornell Chronicle. The XHEMT device, built with ultra-thin gallium ...
Abstract: This study employs the pass transistor logic technique to design and implement Very Large-Scale Integration (VLSI) factors in the context of various adders. The area consumption, power ...
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