Abstract: The evolution states of Si-SiO2 interface traps have been attracting much attention, but there are few reports on the recombination enhanced defect reaction (REDR) effect at interface traps.

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Abstract: The 3-D inductor based on through silicon via (TSV) has been studied in the recent years due to its high density of integration and small footprint area. However, the TSV-based inductor ...

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