Abstract: In this study, SiGe channel nanosheet field-effect transistor (NSFET) with a novel channel release stopping layer (CRSL), namely CRSL-SiGe NSFET, is proposed to addresses the issue of ...
Abstract: The radiation effects of alpha particles on nanosheet-FET (NSH-FET), forksheet-FET (FSH-FET), and complementary-FET (C-FET) were analyzed simultaneously for the first time using 3-D ...
This repository holds the source for this Specification, part of the family of Networked Media Open Specifications from the Advanced Media Workflow Association To quickly start your journey an ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback