Abstract: SiC MOSFETs are applied to constitute a three-phase, 5-kW LLC series resonant dc/dc converter with isolation transformers. A switching frequency of around 200 kHz for the transistors ...
Abstract: This paper presents the SPICE model development of the static characteristics of silicon carbide (SiC) lateral n-channel and p-channel MOSFETs based on the widely used BSIM4 compact model.
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